As the size of IC devices continues to shrink, gate-all-around devices have become an important technology for advanced process nodes. However, the technical challenges are still huge in terms of the process fabrication.
上海集成电路材料研究院联合中科院上海微系统所研发具有内嵌空腔的SOI衬底（Void Embedded Silicon on Insulator，即VESOI）（图1），并成功应用于GAA器件的制备。
The Shanghai Institute of IC Materials (SICM) and the Shanghai Institute of Microsystem and Information Technology Chinese, Academy of Sciences (SIMIT, CAS) developed an SOI substrate (Void Embedded Silicon-on-Insulator, VESOI) with embedded cavities (Figure 1), and successfully applied it in the fabrication of GAA devices.
图1 SOI与VESOI衬底对比 Figure 1 SOI substrate vs. VESOI
The research team developed an 8-inch VESOI substrate (Figure 2), which achieved the high-density arrangement of the cavity structure in the SOI substrate. GAA devices are fabricated on an 8-inch VESOI substrate using a process flow that is fully compatible with common planar CMOS processes (Figure 3).
图2 8英寸VESOI衬底实物图 Figure 2 8-inch VESOI substrate
图3 GAA器件流程简要示意图 Figure 3 Schematic diagram of GAA device process flow
The gate of the VESOI GAA device completely wraps the conductive channel with the same gate oxide thickness above and below the channel. And the device shows excellent electrical performance (Figure 4). Its minimum subthreshold slope is less than 63mV/dec, and the current density can be increased by more than 150% compared with planar SOI devices.
图4 基于VESOI衬底的GAA器件表现出优良电学性能 Figure 4 Excellent electrical performance on GAA devices based on VESOI substrate
与目前常用的GAA器件工艺相比，VESOI GAA器件工艺大大简化，并可兼容大部分工艺节点。VESOI GAA既可用于先进工艺节点器件，也可对成熟工艺节点进行性能升级。研发团队同时还在开发将VESOI应用于传感器、射频器件等一系列技术，以期满足更广泛的应用需求。
Compared with the commonly-used GAA device process recently, the VESOI GAA device fabrication is significantly simplified and compatible with most planar process nodes. It can be used not only in processes beyond advanced nodes, but also for upgrading performance on mature ones.The research team is developing a series of technologies that apply VESOI to sensors, RF devices, etc., to meet a wider range of application requirements.
上海集成电路材料研究院 Shanghai Institute of IC Materials
The Shanghai Institute of IC Materials was initiated and established by the SIMIT, CAS and National Silicon Industry Group, focusing on the R&D and industrialization of integrated circuit substrate materials, fabrication materials and cutting-edge technologies.
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